WSEAS Transactions on Electronics

Print ISSN: 1109-9445
E-ISSN: 2415-1513

Volume 9, 2018

Notice: As of 2014 and for the forthcoming years, the publication frequency/periodicity of WSEAS Journals is adapted to the 'continuously updated' model. What this means is that instead of being separated into issues, new papers will be added on a continuous basis, allowing a more regular flow and shorter publication times. The papers will appear in reverse order, therefore the most recent one will be on top.

Active Matching Technique with Common-Gate Configuration to Improve Performance of PHEMT Frequency Multipliers

AUTHORS: Maryam Abata, Said Mazer, Mahmoud Mehdi, Moulhime El Bekkali, Catherine Algani

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ABSTRACT: In this paper, we verify the potentiality of common-gate configuration as an active impedance matching to improve performance of PHEMT frequency multiplier by 4. A 8.87% relative bandwidth at millimeter wave frequencies for frequency multiplier by 4 is achieved by this technique. In this contribution, simulation results show the good impact of this technique on the performance of PHEMT frequency multiplier by 4 especially on the conversion gain and output power.

KEYWORDS: Active impedance matching stage, PHEMT technology, frequency multiplier, RF circuits, common-gate configuration, passive elements.


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WSEAS Transactions on Electronics, ISSN / E-ISSN: 1109-9445 / 2415-1513, Volume 9, 2018, Art. #2, pp. 8-13

Copyright © 2018 Author(s) retain the copyright of this article. This article is published under the terms of the Creative Commons Attribution License 4.0

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