WSEAS Transactions on Circuits and Systems

Print ISSN: 1109-2734
E-ISSN: 2224-266X

Volume 16, 2017

Notice: As of 2014 and for the forthcoming years, the publication frequency/periodicity of WSEAS Journals is adapted to the 'continuously updated' model. What this means is that instead of being separated into issues, new papers will be added on a continuous basis, allowing a more regular flow and shorter publication times. The papers will appear in reverse order, therefore the most recent one will be on top.

Volume 16, 2017

Analytical Characterization of Unipolar Diode Based on Transistor Channels Model

AUTHORS: Fatima Zohra Mahi, A. Majid. Mammeri, H. Marinchio, C. Palermo, L. Varani

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ABSTRACT: In this paper, we propose an analytical approach for the small-signal response of nanometric InGaAs diode which is extracted to the transistor model in ref [1] when the gate is taking away. The exploitation of the small-signal equivalent circuit elements such as the admittance parameters can give significant information about the noise level of the devices by using the Nyquist relation. The analytical model takes into account the longitudinal and the transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. For the transistor, the total currents -potentials matrix relation between the gate and the drain terminals determine the frequency-dependent of the small-signal admittance response. The noise calculated by using the real part of the transistor/diode admittance under a small-signal perturbation. The results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed as functions of the device geometry (devices length) and the operating temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; to determine the noise level of the InGaAs transistor and diode for the terahertz detection.

KEYWORDS: High mobility InGaAs transistors, nanometric diode, noise, Terahertz frequency


[1] Fatima Zohra Mahi, Hugues Marinchio, Christophe Palermo and Luca Varani, IEEE Transactions on Terahertz Science and Technology. 5, 4 (2015).

[2] P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, G. Sabatini, H. Marinchio and L. Reggiani, Journal of Statistical Mechanics: Theory and Experiment. DOI 10.1088/1742- 5468/2009/01/01047 (2009).

[3] P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, L. Reggiani, Acta Physica Polonica. 119 (2011).

[4] H. Marinchio, G. Sabatini, C. Palermo, J. Torres, L. Chusseau and L. Varani, Journal of Physics: Conference Series, 193 (2009) 012076.

[5] Fatima Zohra Mahi and Luca Varani, International Journal of Mathematical, Computational, 8, 2 (2014).

[6] J. P. Nougier, IEEE Trans. Electron Devices, 41 (1994) 2034.

[7] S. M. Sze, Physics of Semiconductor Devices, Hoboken: Wiley-Interscience, 1969.

[8] M. Shur, GaAs Devices and Circuits, New York, London: Plenum press, 1989.

[9] E. Starikov, P. Shiktorov and V. Gruzinskis, Semiconductor Science and Technology, 27 (2012) 045008.

[10] F. Z. Mahi, A. Helmaoui, L. Varani, P. Shiktorov, E. Starikov and V. Gruzinskis, Journal of Physics IOP Publishing, 193 (2009).

WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 16, 2017, Art. #1, pp. 1-7

Copyright © 2017 Author(s) retain the copyright of this article. This article is published under the terms of the Creative Commons Attribution License 4.0

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