AUTHORS: O. V. Naumova, B. I. Fomin
Download as PDF
ABSTRACT: SOI-FET sensors are high-sensitivity analytical devices used for qualitative and quantitative analyses of biological and chemical substances. Decreasing and monitoring of the state density at surface of sensors are the key tasks to increase their sensitivity and reproducibility of parameters of devices. This study aims to apply the threshold voltage method to the SOI-FET sensor/electrolyte systems to determine the density of states in the sensors. For this aim: 1) a dependency between the sensor threshold voltage and the voltage on the electrode immersed in the electrolyte solution was derived, 2) the analytical and experimental dependencies were used to determine the density of states at the sensor surface Dit, 3) errors in Dit related to the uncertainty of values of components of the electrolyte capacitance were determined. It was shown that the uncertainty in the Dit values can be estimated in the process of measuring in solutions with various salt concentrations (1-100 mM). The maximal error in Dit related to the uncertainty of capacitance associated with the charge adsorbed on the sensor surface Qad can be estimated using the well-known design parameters of sensor, the salt concentration in solution and Qad=0. In particular, it was shown that for sensors with typical parameters (the buried oxide thickness of 200 nm, sensor thickness of 30 nm and top-oxide thickness of 2 nm) this error in Dit2 does not exceed 40% in the 100 mM buffer solutions. The threshold voltage method can be successfully applied for monitoring Dit at the stage of cleaning and activation of the sensor surface.
KEYWORDS: interface-state density, biosensor, silicon-on-insulator, field-effect transistor
REFERENCES:
[1] F. Patolsky, G. Zheng, O. Hayden, M. Lakadamyali, X. Zhuang, C.M. Lieber, Electrical detection of single viruses, Proceedings of the National Academy of Science of the United State of America, 2004, e3Vol.101, No.39, pp.14017-14022.
[2] F. Yang, G.J. Zhang, Silicon nanowiretransistor biosensor for study of moleculemolecule interactions, Review Analytical Chemistry, Vol.33, No.2, 2014, pp. 95–110.
[3] K-I. Chen, B-R. Li, Y-T. Chen, Silicon nanowire field-effect transistor-based biosensors for biomedical diagnosis and cellular recording investigation, Nano Today, Vol.6, No.2, 2011, pp.131-154.
[4] K. Zhu, Y. Zhang, Z. Li, Simultaneous detection of α-fetoprotein and carcinoembryonic antigen based on Si nanowire field-effect Transistors, Sensors, Vol.15, 2015, pp.19225-19236.
[5] Yu.D. Ivanov, T.O. Pleshakova, A.F. Kozlov, K.A Malsagova, N.V. Krohin, V.V. Shumyantseva, I.D. Shumov, V.P. Popov, O.V. Naumova, B.I. Fomin, D.A. Nasimov, A.L. Aseev, A.I. Archakov, SOI nanowire for the high-sensitive detection of HBsAg and αfetoprotein, Lab on a Chip, Vol.12, No.23, 2012, pp.5104-5111.
[6] B. Veigas, E. Fortunato, P.V. Baptista, Field effect sensors for nucleic acid detection: recent advances and future perspectives, Sensors, Vol.15, 2015, pp.10380-10398.
[7] E. Dmitrienko , O. Naumova, B. Fomin, M. Kupryushkin, A. Volkova, N. Amirkhanov, D. Semenov, I. Pyshnaya, D. Pyshnyi, Surface modification of SOI-FET sensors for label-free and specific detection of short RNA analyte, Nanomedicine, Vol.11, No.16, 2016, pp. 2073- 2082.
[8] O.V. Naumova, B.I. Fomin, D.A. Nasimov, N.V. Dudchenko, S.F. Devyatova, E.D. Zhanaev, V.P. Popov, A.V. Latyshev, A.L. Aseev, Yu.D. Ivanov, SOI nanowires as sensors for charge detection, Semiconductor Science and Technology, Vol.25, No.5, 2010, p.055004.
[9] O.V. Naumova, B.I. Fomin, Optimization of the Response of Nanowire Biosensors, Optoelectronics, Instrumentation and Data Processing, Vol.52, No.5, 2016, pp.1-5.
[10] H.-K. Lim, J. G. Fossum, Threshold Voltage ofThin-Film Silicon-on-Insularor (SOI) MOSFET’s, IEEE Transaction Electron Devices, Vol. ED-30, No.10, 1983, pp.1244- 1251.
[11] D. E. Yates, S. Levine, T.W. Healy, Sitebinding Model of the Electrolyte Double Layer at the Oxide/Wafer Interface, Journal of the Chemical Society-Faraday Transactions, Vol.70, 1974, pp.1807-1818.
[12] L. Bousse, N.F.de Rooij, P. Bergveld, Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface, IEEE Transactions on Electron Devices, Vol. ED-30, No.10, 1983, pp. 1263- 1270.
[13] A. Revil, P.W.J. Glower, Theory of ionicsurface electrical conduction in porous media, Physical Review B, Vol.55, No.3, 1997, pp.1757-1773.
[14] A.J. Bard, L.R. Faulkner, Electrochemical methods: Fundamentals and Applications, John Wiley & Sons, 2001.
[15] H. Wang, L. Pilon, Accurate Simulations of Electric Double Layer Capacitance of Ultramicroelectrodes, The Journal of Physical Chemistry,Vol.115, 2011, pp.16711-16719.
[16] D. Landheer, G. Aers, W.R. McKinnon, M.J. Deen, J.C. Ranuarez, Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors, Journal of Applied Physics, Vol.98, 2005, p. 044701.
[17] A. Ortiz-Conde, F.J. Garcia Sanchez, J.J. Liou, A. Cerdeira, M. Estrada, Y. Yue, A review of recent MOSFET threshold voltage extraction methods, Microelectronics Reliability, Vol.42, No.4-5, 2002, pp.583-596.
