From Micro to Nano: The development of nanoelectronics and its trend  
 

Professor Lili He
San Jose State University
USA
E-mail: lhe@email.sjsu.edu
 

Abstract: Nanoelectronics is becoming a very important research area in past decades. Certain progresses has made in the practical application more recently which shows an attractive future of wider application. This talk will present a summary review of current development of nanoelectronics.
In particular, Monte Carlo simulation of quantum transport in nano-scale transistor, as one of the important research areas of nanoelectronics, will be discussed. Numerical simulations are used to predict the charge transport through a ballistic nano-transistor. Two carrier transport models are primarily used here; the numerical simulation of the ballistic Boltzmann equation and the Non-equilibrium Green's function formalism for quantum transport. The aim of this work is to develop an accurate Monte Carlo based quantum transport simulator that provides a physically rigorous treatment of charge transport and phase breaking inelastic scattering in nano-scaled devices. Further we highlight the role played by high dielectric stacks in such nano-MOSFETs and the dramatic lowering of electron mobility in the channel.
In second part of this talk, certain experimental data in the synthesis and characterization of indium selenide (In₂Se₃) nanowires (NWs), and the fabrication of prototype memory devices using these NWs, will be presented.

As most nanoelectronics device is still in its infancy, it is very hard to be clearly predicted which aspects of nanoelectronics currently under research will lead to mature field and eventually to practical applications, and thus impact our daily life as microelectronics has done. This talk will present some most recent experimental data in nanoelectronic device, and computer simulation results in nanoscale device, and eventually an overview of recent path from micro to nano electronics.